2SB1568 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-80V, -4A)

Transistors
Power Transistor (−80V, −4A)
2SB1568
2SB1568
z Features
1) Available in TO-220 FN package
2) Darling connection provides high
dc current gain (h_FE)
3) Damper diode is incorporated
4) Built in resistors between base and
emitter
5) Two millimeters lower than TO-220 FP
which allows higher density mounting
6) Complementary pair with 2SD2399
zExternal dimensions (Unit : mm)
10.0
φ3.2
4.5
2.8
ROHM : TO-220FN
1.2
1.3
0.8
2.54
2.54
(1) (2) (3)
0.75
(1) Base (Gate)
2.6
(2) Collector (Drain)
(3) Emitter (Sourse)
zApplications
Power amplifler
zAbsolute maximum rating (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−80
−80
−7
−4
−6
2
30
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse) ^∗
W(Ta=25°C)
W(Tc=25°C)
°C
°C
zEquivalent circuit
C
B
R1
R2
E
: R1= 3kΩ B : Base
: ^R2=^{300Ω C : Collector}
E : Emitter
zElectrical characteristics (unless otherwise noted, Ta=25°C)
Parameter
Symbol
Collector−base
breakdown voltage
BVCBO
Collector−emitter
breakdown voltage
BVCEO
Collector cutoff current
BVEBO
Emitter cutoff current
ICBO
DC current gain
Collector−emitter
breakdown voltage
Collector−emitter
saturation voltage
Transition frequency
IEBO
hFE ^∗1
∗1
VCE(sat)
fT^{∗1 ∗2}
Output capacitance
Cob
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Min.
−80
−80
−7
−
−
1000
−
−
−
Typ.
−
−
−
−
−
5000
−1.0
12
35
Max.
−
−
−
−100
−3
−3
10000
−1.5
−
Unit
V
V
V
µA
mV
−
V
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −5mA
VCB = −80V
VEB = −5V
VCE= −3V, IC = −2A
IC/IB= −2A/ −4mA
VCE= −5V, IE = 0.5A, f=10MHz
VCB= −10V, IE = 0A, f=1MHz
Rev.A
1/3