2SB1566 Datasheet, PDF (1/2 Pages) Rohm – For Power Amplification (-60V, -3A)

Transistors
2SB1566
For Power Amplification (−60V, −3A)
2SB1566
zStructure
PNP Silicon Epitaxial Planar Transistor
zFeatures
1) Low VCE (sat).
2) Wide SOA.
zApplications
Relay drive
DC-DC converter
Stabilized power supply
zExternal dimensions (Unit : mm)
TO-220FN
10.0
φ3.2
4.5
2.8
1.2
1.3
(1)Base
(2)Collector
(3)Emitter
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zComplements
PNP
2SB1566
NPN
2SD2395
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Collector power dissipation
Junction temperature
Storage temperature
∗1 Pw=100ms, single pulse
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
Unit
−60
V
−50
V
−5
V
−3
A(DC)
−4.5
A(Pulse)^∗1
2
W(Ta=25°C)
25 W(Tc=25°C)
150
°C
−55 to +150
°C
zPackaging specifications and hFE
Package
Type
Code
hFE Basic ordering unit (pieces)
2SB1566 EF
Taping
−
500
hFE values are classified as follows:
Item
E
F
hFE
100 to 200 160 to 320
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗1 Pulse test
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
−50
−60
−5
−
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
−
60
40
Max. Unit
Conditions
− V IC=−1mA
− V IC=−50µA
− V IE=−50µA
−1.0 µA VCB=−60V
−1.0 µA VEB=−4V
−1.0 V IC/IB=−2A/−0.2A
∗1
−1.5 V IC/IB=−2A/−0.2A
∗1
320 − VCE=−3V, IC=−0.5A
− MHz VCE=−5V, IE=0.5A, f=30MHz ^∗1
− pF VCB=−10V, IE=0A, f=1MHz
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