2SB1565 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (-60V, -3A)

Transistors
2SB1565
For Power Amplification (−60V, −3A)
2SB1565
zStructure
PNP Silicon Epitaxial Planar Transistor
zFeatures
1) Low VCE (sat).
2) Excellent electrical characteristics of DC current Gain hFE.
3) Wide SOA.
zExternal dimensions (Unit : mm)
TO-220FN
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zApplications
Low frequency power amplifier
Stereophonic output
Stabilization of power supply
zComplements
PNP
2SB1565
NPN
2SD2394
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Collector power dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
−60
V
−60
V
−7
V
−3
A
−6
A ^∗1
2
W(Ta=25°C)
25 W(Tc=25°C)
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=100ms, non repetitive pulse
zPackaging specifications and hFE
Package
Type
Code
hFE Basic ordering unit (pieces)
2SB1565 EF
Taping
−
500
hFE values are classified as follows:
Item
hFE
E
F
100 to 200 160 to 320
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗1 Single pulse ∗2 hFE rank
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−60 − − V IC=−1mA
−60 − − V IC=−50µA
−7 − − V IE=−50µA
− − −10 µA VCB=−60V
− − −10 µA VEB=−7V
− − −1.5 V IC/IB=−2A/−0.2A
∗1
100 − 320 − VCE=−5V, IC=−0.5A
∗1,2
− 15 − MHz VCE=−5V, IE=0.5A, f=5MHz ^∗1
− 50 − pF VCB=−10V, IE=0A, f=1MHz
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