2SB1561_09 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (−60V, −2A)

Medium Power Transistor (−60V, −2A)
2SB1561
Features
1) Low saturation voltage , typically
VCE (sat) = −0.15V at IC / IB = −1A / −50mA.
2) Collector-emitter voltage = −60V
3) Pc = 2W (on 40400.7mm ceramic board).
4) Complements the 2SD2391.
Dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−60
−60
−6
−2
−6
0.5
2
150
−55 to +150
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40⁺ 40⁺ 0.7mm ceramic board.
Unit
V
V
V
A
A ^∗1
W
∗2
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
hFE1
DC current transfer ratio
hFE2
Transition frequency
fT
Output capacitance
Cob
∗ Measured using pulse current
Min.
Typ.
Max.
Unit
Conditions
−60
−
−
V
IC=−50μA
−60
−
−
V
IC=−1mA
−6
−
−
V
IE=−50μA
−
−
−0.1
μA VCB=−50V
−
−
−0.1
μA VEB=−5V
−
−0.15 −0.35
V
IC/IB=−1A/−50mA
∗
120
−
270
−
VCE/IC=−2V/−0.5A
45
−
−
−
VCE/IC=−2V/−1.5A
−
200
−
MHz VCE=−2V, IE=0.5A, f=100MHz
∗
−
23
−
pF VCB=−10V, IE=0A, f=1MHz
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
2SB1561
MPT3
Q
BL∗
T100
1000
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2009.12 - Rev.A