2SB1561 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (-60V, -2A)

Transistors
2SB1561
Medium Power Transistor (−60V, −2A)
2SB1561
zFeatures
1) Low saturation voltage , typically
VCE (sat) = −0.15V at IC / IB = −1A / −50mA.
2) Collector-emitter voltage = −60V
3) Pc = 2W (on 40×40×0.7mm ceramic board).
4) Complements the 2SD2391.
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40⁺ 40⁺ 0.7mm ceramic board.
Limits
−60
−60
−6
−2
−6
0.5
2
150
−55 to +150
Unit
V
V
V
A
A ^∗1
W
∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
hFE1
DC current transfer ratio
hFE2
Transition frequency
fT
Output capacitance
Cob
∗ Measured using pulse current
Min.
Typ.
Max.
Unit
Conditions
−60
−
−
V
IC=−50µA
−60
−
−
V
IC=−1mA
−6
−
−
V
IE=−50µA
−
−
−0.1
µA VCB=−50V
−
−
−0.1
µA VEB=−5V
−
−0.15 −0.35
V
IC/IB=−1A/−50mA
∗
120
−
270
−
VCE/IC=−2V/−0.5A
45
−
−
−
VCE/IC=−2V/−1.5A
−
200
−
MHz VCE=−2V, IE=0.5A, f=100MHz
∗
−
23
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.A 1/3