2SB1474 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (-80V, -4A)

Transistor
Power Transistor (−80V, −4A)
2SB1474
2SB1474
!Features
1) Darlington connection for a high hFE.
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* ^{Single pulse, Pw=100ms}
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
-80
-80
-7
-4
-6
1
10
150
-55~+150
Unit
V
V
V
A(DC)
A_*
W
W (Tc=25˚C)
˚C
˚C
!External dimensions (Units : mm)
5.5 1.5
0.9
C0.5
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1474
CPT3
1k~10k
TL
2500
!Circuit diagram
C
B
R1
R2
E
R1 3kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
-80
-
Collector-emitter breakdown voltage BVCEO
-80
-
-
V IC=-50µA
-
V IC=-1mA
Collector cutoff current
ICBO
-
-
-100
µA VCB=-80V
Emitter cutoff current
IEBO
-
-
-3
mA VEB=-5V
Collector-emitter saturation voltage
VCE(sat)
-
-1
-1.5
V IC/IB=-2A/-4mA
*¹
DC current transfer ratio
hFE
1000 5000 10000
-
VCE/IC=-3V/-2A
*¹
Transition frequency
fT
-
12
-
MHz VCE=-5V, IE=0.5A, f=10MHz
*²
Output capacitance
Cob
-
45
-
pF VCB=-10V, IE=0A, f=1MHz
* * ^{1 Measured using pulse current. 2 Transition frequency of the device.}