2SB1443 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-50V, -2A)

Transistors
Power Transistor (−50V, −2A)
2SB1443
2SB1443
zFeatures
1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA.
2) Excellent DC current gain characteristics.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−50
−6
−2
−5
1
150
−55~+150
∗1 Single pulse, Pw=10ms
∗2 Printed circuit board 1.7mm thick, collector plating 1cm² or larger.
Unit
V
V
V
A (DC)
A (Pulse) ^∗1
W ^∗2
°C
°C
zPackaging specifications and hFE
Type
2SB1443
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
ATV
Q
−
TV2
2500
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
−50
−
−
V
IC=−50µA
−50
−
−
V
IC=−1mA
−6
−
−
V
IE=−50µA
−
−
−0.1
µA VCB=−50V
−
−
−0.1
µA VEB=−5V
−
−0.15 −0.35
V
IC/IB=−1A/−50mA
∗
120
−
270
−
VCE/IC=−2V/−0.5A
−
200
−
MHz VCE=−2V, IE=0.5A, f=100MHz
−
36
−
pF VCB=−10V, IE=0A, f=1MHz
∗
Rev.A
1/2