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2SB1427_1 Datasheet, PDF (1/3 Pages) Rohm – Power transistor (−20V, −2A) | |||
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Transistors
Power transistor (â20V, â2A)
2SB1427
2SB1427
zFeatures
1) Low saturation voltage,
VCE : Max . â0.5V at IC/IB = â1A / â50mA.
2) Excellent DC current gain characteristics.
zExternal dimensions (Unit : mm)
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Storage temperature
Tj
Tstg
â1 Single pulse, Pw=10ms
â2 When mounted on a 40Ã40Ã0.7mm ceramic board.
Limits
â20
â20
â6
â2
â3
0.5
2
150
â55 ~ +150
Unit
V
V
V
A(DC)
A(Pulse) â1
W
â2
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
â Denotes hFE
2SB1427
MPT3
E
BJ â
T100
1000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
â Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
â20
â
â
V IC = â50µA
â20
â
â
V
IC = â1mA
â6
â
â
V IE = â50µA
â
â
â0.5
µA VCB = â16V
â
â
â0.5
µA VEB = â5V
â
â
â0.5
V
IC/IB = â1A/â50mA
â
390
â
820
â
VCE/IC = â6V/â0.5A
â
90
â
MHz VCE = â10V , IE = 10mA , f= 100MHz
â
30
â
pF VCB = â10V , IE = 0A , f = 1MHz
Rev.A
1/2
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