2SB1427 Datasheet, PDF (1/2 Pages) Rohm – Power transistor (-20V, -2A)

Transistors
Power transistor (−20V, −2A)
2SB1427
2SB1427
!Features
1) Low saturation voltage,
typically VCE(sat) = −0.5V at IC/IB = −1A / −50mA.
2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
ROHM : MPT3
EIAJ : SC-62
4.0
1.0
2.5 0.5
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7mm ceramic board.
Limits
−20
−20
−6
−2
−3
0.5
2
150
−55 ~ +150
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
∗2
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SB1427
MPT3
E
BJ ∗
T100
1000
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
−20
−
−
V IC = −50µA
Collector-emitter breakdown voltage BVCEO
−20
−
−
V
IC = −1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V IE = −50µA
Collector cutoff current
ICBO
−
−
−0.5
µA VCB = −16V
Emitter cutoff current
IEBO
−
−
−0.5
µA VEB = −5V
Collector-emitter saturation voltage
VCE(sat)
−
−
−0.5
V
IC/IB = −1A/−500mA
∗
DC current transfer ratio
hFE
390
−
820
−
VCE/IC = −6V/−0.5A
Transition frequency
fT
−
90
−
MHz VCE = −10V , IE = 10mA , f= 30MHz
Output capacitance
Cob
−
30
−
pF VCB = −10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.