|
2SB1424_1 Datasheet, PDF (1/4 Pages) Rohm – Low VCE(sat) Transistor (−20V, −3A) | |||
|
Transistors
2SB1424 / 2SA1585S
Low VCE(sat) Transistor (â20V, â3A)
2SB1424 / 2SA1585S
zFeatures
1) Low VCE(sat).
VCE(sat) = â0.2V (Typ.)
(IC/IB = â2A / â0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2150 / 2SC4115S.
zStructure
Epitaxial planar type
PNP silicon transistor
zExternal dimensions (Unit : mm)
2SB1424
4.5+â00..12
1.6±0.1
1.5±0.1
2SA1585S
4±0.2
2±0.2
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4â+00..015
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
â Denotes hFE
â Abbreviated symbol: AE
0.45+â00..0155
2.5+â00..14
5
0.5
0.45
+0.15
â0.05
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
2SB1424
Collector current 2SA1585S
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector power 2SB1424
dissipation
2SA1585S
Junction temperature
Storage temperature
â Single pulse Pw=10ms
PC
Tj
Tstg
Limits
â20
â20
â6
â3
â2
â5
0.5
0.4
150
â55 to 150
Unit
V
V
V
A
A(Pulse) â
W
°C
°C
Rev.A
1/3
|
▷ |