2SB1424T100R Datasheet, PDF (1/4 Pages) Rohm – Low VCE(sat) Transistor (−20V, −3A)

Transistors
2SB1424 / 2SA1585S
Low VCE(sat) Transistor (−20V, −3A)
2SB1424 / 2SA1585S
zFeatures
1) Low VCE(sat).
VCE(sat) = −0.2V (Typ.)
(IC/IB = −2A / −0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2150 / 2SC4115S.
zStructure
Epitaxial planar type
PNP silicon transistor
zExternal dimensions (Unit : mm)
2SB1424
4.5^+−_00..12
1.6±0.1
1.5±0.1
2SA1585S
4±0.2
2±0.2
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4_{−+00..015}
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
∗ Denotes hFE
∗ Abbreviated symbol: AE
0.45^+−_00..0155
2.5^+−_00..14
5
0.5 ^0.45+−00..0155
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
2SB1424
Collector current 2SA1585S
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector power ^2SB1424
dissipation
2SA1585S
Junction temperature
Storage temperature
∗ Single pulse Pw=10ms
PC
Tj
Tstg
Limits
−20
−20
−6
−3
−2
−5
0.5
0.4
150
−55 to 150
Unit
V
V
V
A
A(Pulse) ∗
W
°C
°C
Rev.A
1/3