2SB1386_1 Datasheet, PDF (1/5 Pages) Rohm – Low frequency transistor (−20V, −5A)

Transistors
2SB1386 / 2SB1412
Low frequency transistor (−20V, −5A)
2SB1386 / 2SB1412
zFeatures
1) Low VCE(sat).
VCE(sat) = −0.35V (Typ.)
(IC/IB = −4A / −0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2098 / 2SD2118.
zDimensions (Unit : mm)
2SB1386
2SB1412
zStructure
Epitaxial planar type
PNP silicon transistor
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
∗ Abbreviated symbol: BH
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−20
Emitter-base voltage
VEBO
−6
Collector current
−5
IC
−10
0.5
2SB1386
Collector power
dissipation
PC
2
1
2SB1412
10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
W _∗2
W
W(Tc=25°C)
°C
°C
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Rev.B
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