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2SB1386T100R Datasheet, PDF (1/4 Pages) Rohm – Low frequency transistor (−20V,−5A) | |||
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Low frequency transistor (â20V,â5A)
2SB1412
zFeatures
1) Low VCE(sat).
VCE(sat) = â0.35V (Typ.)
(IC/IB = â4A / â0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.
zStructure
Epitaxial planar type
PNP silicon transistor
zDimensions (Unit : mm)
2SB1412
ROHM : CPT3
EIAJ : SC-63
â Denotes hFE
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
â30
Collector-emitter voltage
VCEO
â20
Emitter-base voltage
VEBO
â6
Collector current
â5
IC
â10
Collector power
1
dissipation
2SB1412
PC
10
Junction temperature
Tj
150
Storage temperature
Tstg
â55 to 150
â1 Single pulse, Pw=10ms
Unit
V
V
V
A(DC)
A(Pulse) â1
W
W(Tc=25°C)
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO â30
Collector-emitter breakdown voltage BVCEO â20
Emitter-base breakdown voltage
BVEBO
â6
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
Collector-emitter saturation voltage VCE(sat) â
DC current transfer ratio
Transition frequency
hFE
82
fT
â
Output capacitance
â Measured using pulse current.
Cob
â
Typ.
â
â
â
â
â
0.35
â
120
60
Max.
â
â
â
â0.5
â0.5
â1.0
390
â
â
Unit
V
V
V
µA
µA
V
â
MHz
pF
Conditions
IC= â50µA
IC= â1mA
IE= â50µA
VCB= â20V
VEB= â5V
IC/IB= â4A/ â0.1A
â
VCE= â2V, IC= â0.5A
â
VCE= â6V, IE=50mA, f=100MHz
VCB= â20V, IE=0A, f=1MHz
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
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