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2SB1316TL Datasheet, PDF (1/3 Pages) Rohm – Power Transistor | |||
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Transistors
Power Transistor (â100V , â2A)
2SB1316
2SB1316
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
â100
â100
Emitter-base voltage
Collector current
Collector 2SB1580
power
dissipation 2SB1316
VEBO
â8
IC
â2
â3
2
PC
1
10
Junction temperature
Tj
150
Storage temperature
Tstg
â55 to +150
â1 Single pulse Pw=100ms
â2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse) â1
W
â2
W(Tc=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
â Denotes hFE
2SB1580
MPT3
1k to 10k
BNâ
T100
1000
2SB1316
CPT3
1k to 10k
â
TL
2500
zEquivalent circuit
C
B
R1
R2
E
R1 3.5kâ¦
R2 300â¦
B : Base
C : Collector
E : Emitter
zExternal dimensions (Unit : mm)
2SB1580
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SB1316
5.5
1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base
(2) Collector
(3) Emitter
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
â100
â
â
V
IC = â50µA
Collector-emitter breakdown voltage BVCEO
â100
â
â
V
IC = â5mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
â10
â
â
â
â
â10
V
IE = â5mA
µA VCB = â100V
Emitter cutoff current
IEBO
â
â
â3
mA VEB = â7V
Collector-emitter saturation voltage
VCE(sat)
â
â
â1.5
V
IC/IB= â1A/â1mA
â
DC current transfer ratio
hFE
1000
â
10000
â
VCE = â2V , IC = â1A
â
Transition frequency
Output capacitance
fT
Cob
â
50
â
MHz VCE = â5V , IE =0.1A , f = 30MHz
â
35
â
pF VCB = â10V , IE = 0A , f = 1MHz
â Measured using pulse current.
Rev.A
1/2
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