2SB1308 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-50V, -3A)

Transistors
Power transistor (−50V, −3A)
2SB1308
2SB1308
zFeatures
1) Low saturation voltage, typically
VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A.
2) Excellent DC current gain characteristics.
3) Complements the 2SD1963.
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−20
Emitter-base voltage
VEBO
−6
Collector current
−3
IC
−5
0.5
Collector power dissipation
PC
2.0
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse) _∗1
W
W _∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −30
Collector-emitter breakdown voltage BVCEO −20
Emitter-base breakdown voltage
BVEBO
−6
Collector cutoff current
ICBO
−
Emitter cutoff current
DC current transfer ratio
IEBO
−
hFE
82
Collector-emitter saturation voltage VCE(sat) −
Transition frequency
Output capacitance
∗ Measured using pulse current.
fT
−
Cob
−
Typ. Max. Unit
−
−
V
−
−
V
−
−
V
− −0.5 µA
− −0.5 µA
−
390
−
− −0.45 V
120
− MHz
60
−
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −5V
VCE= −2V, IC= −0.5A
∗
IC/IB= −1.5A/ −0.15A
∗
VCE= −6V, IE=50mA, f=100MHz
VCB= −20V, IE=0A, f=1MHz
Rev.A
1/2