2SB1275_09 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-160V, -1.5A)

Power Transistor (160V, 1.5A)
2SB1275 / 2SB1236A
Features
1) High breakdown voltage.(BVCEO = 160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V)
3) High transition frequency.(fT = 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.
Absolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector _2SB1275
power
dissipation _2SB1236A
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Limits
−160
−160
−5
−1.5
−3
1
10
1
150
Storage temperature
Tstg
−55 to +150
∗ 1 Single pulse Pw=100ms
∗ _{2 Printed circuit board 1.7mm thick, collector plating 1cm}2 _{or larger.}
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W(Tc=25°C)
W
∗2
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
D
TV2
2500
Dimensions (Unit : mm)
2SB1275
ROHM : CPT3
EIAJ : SC-63
5.5 1.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1236A
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
−160
−
−
V IC = −50μA
Collector-emitter breakdown voltage BVCEO
−160
−
−
V IC = −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V IE = −50μA
Collector cutoff current
ICBO
−
−
−1
μA VCB = −120V
Emitter cutoff current
IEBO
−
−
−1
μA VEB = −4V
Collector-emitter saturation voltage
VCE(sat)
−
−
−2
V IC/IB = −1A/−0.1A
∗
DC current
transfer ratio
2SB1275
2SB1236A
82
−
180
−
hFE
VCE = −5V , IC = −0.1A
100
−
200
−
Transition frequency
fT
−
50
−
MHz VCE = −5V , IE = 0.1A , f = 30MHz
Output capacitance
∗Measured using pulse current.
Cob
−
30
−
pF VCB = −10V , IE =0A , f = 1MHz
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2009.12 - Rev.B