2SB1275 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-160V , -1.5A)

Transistors
2SB1275 / 2SB1236A
Power Transistor (−160V , −1.5A)
2SB1275 / 2SB1236A
zFeatures
1) High breakdown voltage.(BVCEO = −160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V)
3) High transition frequency.(fT = 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector _2SB1275
power
dissipation _2SB1236A
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Limits
−160
−160
−5
−1.5
−3
1
10
1
150
Storage temperature
Tstg
−55∼+150
∗ 1 Single pulse Pw=100ms
∗ _{2 Printed circuit board 1.7mm thick, collector plating 1cm}2 _{or larger.}
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W(Tc=25°C)
W
∗2
°C
°C
zExternal dimensions (Unit : mm)
2SB1275
ROHM : CPT3
EIAJ : SC-63
5.5 1.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1236A
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
PQ
TV2
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Symbol
BVCBO
Min.
−160
Typ.
−
Max.
−
Unit
V
IC = −50µA
Conditions
Collector-emitter breakdown voltage BVCEO
−160
−
Emitter-base breakdown voltage
BVEBO
−5
−
Collector cutoff current
ICBO
−
−
Emitter cutoff current
IEBO
−
−
Collector-emitter saturation voltage
VCE(sat)
−
−
DC current
transfer ratio
2SB1275
2SB1236A
82
−
hFE
82
−
Transition frequency
fT
−
50
Output capacitance
∗Measured using pulse current.
Cob
−
30
−
V IC = −1mA
−
V IE = −50µA
−1
µA VCB = −120V
−1
µA VEB = −4V
−2
V IC/IB = −1A/−0.1A
∗
180
270
−
VCE = −5V , IC = −0.1A
−
−
MHz VCE = −5V , IE = 0.1A , f = 30MHz
−
pF VCB = −10V , IE =0A , f = 1MHz
Rev.A
1/3