2SB1260_11 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-80V, -1A)

Power Transistor (80V, 1A)
2SB1260 / 2SB1181 / 2SB1241
Features
1) Hight breakdown voltage and high current.
BVCEO=80V, IC = 1A
2) Good hFE linearty.
3) Low VCE(sat).
Complements the 2SD1898 / 2SD1863 / 2SD1733.
Dimensions (Unit : mm)
2SB1260
4.5^+0.2
1.6±0.1
1.5±
2SB1181
6.5±0.2
5.1^+0.2
C0.5
2.3^+0.2
0.5±0.1
Structure
Epitaxial planar type
PNP silicon transistor
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
ROHM : MPT3
EIAJ : SC-62
0.4^+0.1
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1241
6.8±0.2
2.5±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−80
Collector-emitter voltage
VCEO
−80
Emitter-base voltage
VEBO
−5
Collector current
IC
−1
ICP
−2 ^∗1
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
PC
0.5
2 ^∗2
1 ^∗3
2SB1181
10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
∗2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board.
∗3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25°C)
°C
°C
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2011.05 - Rev.F