2SB1260_1 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (−80V, −1A)

Transistors
2SB1260 / 2SB1181 / 2SB1241
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
zFeatures
1) Hight breakdown voltage and high current.
BVCEO= −80V, IC = −1A
2) Good hFE linearty.
3) Low VCE(sat).
4) Complements the 2SD1898 / 2SD1863 /
2SD1733.
zStructure
Epitaxial planar type
PNP silicon transistor
zExternal dimensions (Unit : mm)
2SB1260
4.5^+−_00..12
1.6±0.1
1.5^+−_00..12
2SB1181
6.5±0.2
5.1^{+−00..21}
C0.5
2.3^{+−00..21}
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
ROHM : MPT3
EIAJ : SC-62
Abbreviated
∗ symbol: BE
0.4_{−+00..015}
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1241
6.8±0.2
2.5±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
∗ Denotes hFE
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Limits
−80
−80
−5
−1
−2 ^∗1
0.5
2 ^∗2
1 ^∗3
2SB1181
10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
∗2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board.
∗3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25°C)
°C
°C
Rev.C
1/3