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2SB1260_09 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-80V, -1A) | |||
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Power Transistor (ï80V, ï1A)
2SB1260 / 2SB1181 / 2SB1241
ï¬Features
1) Hight breakdown voltage and high current.
BVCEO=ï ï80V, IC = ï ï1A
2) Good hFE linearty.
3) Low VCE(sat).
Complements the 2SD1898 / 2SD1863 / 2SD1733.
ï¬Dimensions (Unit : mm)
2SB1260
4.5+â00..12
1.6±0.1
1.5+â00..12
2SB1181
6.5±0.2
5.1+â00..21
C0.5
2.3+â00..21
0.5±0.1
ï¬Structure
Epitaxial planar type
PNP silicon transistor
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
ROHM : MPT3
EIAJ : SC-62
Abbreviated
â symbol: BE
0.4â+00..015
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1241
6.8±0.2
2.5±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
â Denotes hFE
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
â80
Collector-emitter voltage
VCEO
â80
Emitter-base voltage
VEBO
â5
Collector current
IC
â1
ICP
â2 â1
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
PC
0.5
2 â2
1 â3
2SB1181
10
Junction temperature
Tj
150
Storage temperature
Tstg
â55 to 150
â1 2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
â2 2SB1260 : When mounted on a 40Ã40Ã0.7 mm ceramic board.
â3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25°C)
°C
°C
www.rohm.com
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.E
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