2SB1260 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor

Transistors
2SB1260 / 2SB1181 / 2SB1241
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
!Features
1) High breakdown voltage and high
current.
BVCEO= −80V, IC=−1A
2) Good hFE linearity.
3) Low VCE(sat).
4) Complements the 2SD1898 /
2SD1863 / 2SD1733.
!Structure
Epitaxial planar type
PNP silicon transistor
!External dimensions (Units : mm)
2SB1260
4.5+_−00..12
1.6±0.1
1.5_−^+00..12
2SB1181
6.5±0.2
5.1+_−00..12
C0.5
2.3+_−00..12
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
ROHM : MPT3
EIAJ : SC-62
Abbreviated
∗ symbol: BH
0.4_−^+00..015
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1241
6.8±0.2
2.5±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
* Denotes hFE
!Absolute maximum ratings (Ta=25°C)
(1) Emitter
(2) Collector
(3) Base
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
2SB1181
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
-80
-80
-5
-1
-2
0.5
2
1
10
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse) *1
*2
W
*3
W(Tc=25˚C)
˚C
˚C
*1 Single pulse, Pw=100ms
*2 When mounted on a 40×40×0.7 mm ceramic board.
*3 Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.