|
2SB1243 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-60V, -3A) | |||
|
Power Transistor (ï60V, ï3A)
2SB1243
ï¬Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1864.
ï¬Dimensions (Unit : mm)
2SB1243
6.8±0.2
2.5±0.2
ï¬Structure
Epitaxial planar type
PNP silicon transistor
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
â60
Collector-emitter voltage
VCEO
â50
Emitter-base voltage
VEBO
â5
Collector current
IC
â3
Collector power dissipation
PC
1
Junction temperature
Tj
150
Storage temperature
Tstg
â55 to 150
â1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Unit
V
V
V
A (DC)
W
â1
°C
°C
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO â60
â
â
V IC= â50μA
Collector-emitter breakdown voltage BVCEO â50
â
â
V IC= â1mA
Emitter-base breakdown voltage
BVEBO
â5
â
â
V IE= â50μA
Collector cutoff current
ICBO
â
â
â1
μA VCB= â40V
Emitter cutoff current
IEBO
â
â
â1
μA VEB= â4V
Collector-emitter saturation voltage VCE(sat) â
â
â1
V IC/IB= â2A/ â0.2A
â
DC current transfer ratio
hFE
120
â
390
â VCE= â3V, IC= â0.5A
â
Transition frequency
fT
â
70
â
MHz VCE= â5V, IE=0.5A, f=30MHz
Output capacitance
â Measured using pulse current.
Cob
â
50
â
pF VCB= â10V, IE=0A, f=1MHz
www.rohm.com
1/3
âc 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.D
|
▷ |