2SB1236 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-120V , -1.5A)

Transistors
Power Transistor (−120V, −1.5A)
2SB1236
2SB1236
zFeatures
1) High breakdown voltage. (BVCEO = −120V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = −10V)
3) High transition frequency. (fT = 50MHz)
4) Complements the 2SD1857.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−120
Collector-emitter voltage
VCEO
−120
Emitter-base voltage
VEBO
−5
Collector current
−1.5
IC
−3
Collector power dissipation
PC
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw = 100ms
∗2 Printed circuit board 1.7mm thick, collector plating 1cm² or larger.
Unit
V
V
V
A (DC)
∗ A (Pulse) 1
W _∗2
°C
°C
zExternal dimensions (Unit : mm)
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1236
ATV
QR
TV2
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
−120
−
−
V IC = −50µA
Collector-emitter breakdown voltage BVCEO
−120
−
−
V ICv = −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V IE = −50µA
Collector cutoff current
ICBO
−
−
−1
µA VCB = −100V
Emitter cutoff current
IEBO
−
−
−1
µA VEB = −4V
Collector-emitter saturation voltage
VCE(sat)
−
−
−2
V
IC/IB = −1A/−0.1A
∗
DC current transfer ratio
hFE
120
−
390
−
VCE = −5V , IC = −0.1A
Transition frequency
fT
−
50
−
MHz VCE = −5V , IE = 0.1A , f = 30MHz
Output capacitance
Cob
−
30
−
pF VCB = −10V , IE = 0A , f = 1MHz
∗^{Measured using pulse current.}
Rev.A
1/2