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2SB1197K_08 Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor (-32V, -0.8A) | |||
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Transistors
2SB1197K
Low Frequency Transistor (32V, 0.8A)
2SB1197K
zFeatures
1) Low VCE(sat).
VCE(sat) Í 0.5V
ÍIC / IB= 0.5A / 50mAÍ
2) IC = 0.8A.
3) Complements the 2SD1781K.
zStructure
Epitaxial planar type
PNP silicon transistor
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
zExternal dimensions (Unit : mm)
ROHM : SMT3
EIAJ : SC-59
â Denotes hFE
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1+â00..12
0.8±0.1
0~0.1
(3)
All terminals have the
same dimensions
0.4+â00..015
0.15â+00..016
â Abbreviated symbol: AH
Limits
Unit
â40
V
â32
V
â5
V
â0.8
A
0.2
W
150
°C
â55 to 150
°C
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO â40
Collector-emitter breakdown voltage BVCEO â32
Emitter-base breakdown voltage
BVEBO â5
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
Collector-emitter saturation voltage VCE(sat) â
DC current transfer ratio
hFE 120
Transition frequency
fT
â
Output capacitance
Cob
â
Typ.
â
â
â
â
â
â
â
200
12
Max.
â
â
â
â0.5
â0.5
â0.5
390
â
30
Unit
V
V
V
μA
μA
V
â
MHz
pF
Conditions
IC= â50μA
IC= â1mA
IE= â50μA
VCB= â20V
VEB= â4V
IC/IB= â0.5A/ â50mA
VCE= â3V, IC= â100mA
VCE= â5V, IE=50mA, f=100MHz
VCB= â10V, IE=0A, f=1MHz
Rev.A
1/2
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