2SB1197KT146Q Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor (32V, 0.8A)

Transistors
2SB1197K
Low Frequency Transistor (32V, 0.8A)
2SB1197K
zFeatures
1) Low VCE(sat).
VCE(sat) ͟ 0.5V
̈́IC / IB= 0.5A / 50mAͅ
2) IC = 0.8A.
3) Complements the 2SD1781K.
zStructure
Epitaxial planar type
PNP silicon transistor
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
zExternal dimensions (Unit : mm)
ROHM : SMT3
EIAJ : SC-59
∗ Denotes hFE
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1^+−_00..12
0.8±0.1
0~0.1
(3)
All terminals have the
same dimensions
0.4_{−+00..015}
0.15_{−+00..016}
∗ Abbreviated symbol: AH
Limits
Unit
−40
V
−32
V
−5
V
−0.8
A
0.2
W
150
°C
−55 to 150
°C
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
200
12
Max.
−
−
−
−0.5
−0.5
−0.5
390
−
30
Unit
V
V
V
μA
μA
V
−
MHz
pF
Conditions
IC= −50μA
IC= −1mA
IE= −50μA
VCB= −20V
VEB= −4V
IC/IB= −0.5A/ −50mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Rev.A
1/2