2SB1189_10 Datasheet, PDF (1/3 Pages) Rohm – Medium power transistor(-80V, -0.7A)

Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−80
Collector-emitter voltage
VCEO
−80
Emitter-base voltage
VEBO
−5
Collector current
IC
−0.7
0.5
Collector power
dissipation
2SB1189
PC
2
2SB1238
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 When mounted on a 40×40×0.7 mm ceramic board.
∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A
W
∗1
∗2
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
2SB1189
MPT3
QR
BD∗
T100
1000
2SB1238
ATV
QR
−
TV2
2500
Dimensions (Unit : mm)
2SB1189
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
2SB1238
6.8
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
−80
−
−80
−
−5
−
−
−
−
−
−
−0.2
120
−
−
100
−
14
Max.
−
−
−
−0.5
−0.5
−0.4
390
−
20
Unit
V
V
V
μA
μA
V
−
MHz
pF
Conditions
IC=−50μA
IC=−2mA
IE=−50μA
VCB=−50V
VEB=−4V
IC/IB=−500mA/−50mA
VCE/IC=−3V/−0.1A
VCE=−10V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
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2010.07 - Rev.B