2SB1189 Datasheet, PDF (1/3 Pages) Rohm – Medium power transistor (-80V, -0.7A)

Transistors
2SB1189 / 2SB1238
Medium power transistor (−80V, −0.7A)
2SB1189 / 2SB1238
zFeatures
1) High breakdown voltage, BVCEO=−80V, and
high current, IC=−0.7A.
2) Complements the 2SD1767 / 2SD1859.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−80
Collector-emitter voltage
VCEO
−80
Emitter-base voltage
VEBO
−5
Collector current
IC
−0.7
0.5
Collector power
dissipation
2SB1189
PC
2
2SB1238
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 When mounted on a 40×40×0.7 mm ceramic board.
∗2 Printed circuit board 1.7 mm thick, collector plating 1cm² or larger.
Unit
V
V
V
A
W
∗1
∗2
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗^{Denotes hFE}
2SB1189
MPT3
QR
BD_∗
T100
1000
2SB1238
ATV
QR
−
TV2
2500
zExternal dimensions (Unit : mm)
2SB1189
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
2SB1238
6.8
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ. Max.
Unit
Conditions
−80
−
−
V
IC=−50µA
−80
−
−
V
IC=−2mA
−5
−
−
V
IE=−50µA
−
−
−0.5
µA VCB=−50V
−
−
−0.5
µA VEB=−4V
−
−0.2 −0.4
V
IC/IB=−500mA/−50mA
120
−
390
−
VCE/IC=−3V/−0.1A
−
100
−
MHz VCE=−10V, IE=50mA, f=100MHz
−
14
20
pF VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2