2SB1188T100R Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (32V, 2A)

Medium power transistor (32V, 2A)
2SB1188 / 2SB1182 / 2SB1240
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SD1766 / 2SD1758 / 2SD1862.
Dimensions (Unit : mm)
2SB1188
4.5^{+−00..21}
1.6±0.1
1.5_−⁺_00..12
2SB1182
6.5±0.2
5.1⁺_−^00..21
C0.5
2.3⁺_−^00..21
0.5±0.1
Structure
Epitaxial planar type
PNP silicon transistor
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4_−⁺_00..015
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
∗ Abbreviated symbol: BC
2SB1240
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
∗ Denotes hFE
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−40
Collector-emitter voltage
VCEO
−32
Emitter-base voltage
VEBO
−5
Collector current
−2
IC
−3
2SB1188
Collector power
dissipation
2SB1182
2SB1240
0.5
2
PC
10
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=100ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.
Unit
V
V
V
A(DC)
A (Pulse)∗1
W
W ∗2
W (Tc=25°C)
W ∗3
°C
°C
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2009.12 - Rev.B