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2SB1188T100Q Datasheet, PDF (1/4 Pages) Littelfuse – Medium power transistor (32V, 2A) | |||
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Medium power transistor (ï32V, ï2A)
2SB1188 / 2SB1182 / 2SB1240
ï¬Features
1) Low VCE(sat).
VCE(sat) = ï0.5V (Typ.)
(IC/IB = ï2A / ï0.2A)
2) Complements the 2SD1766 / 2SD1758 / 2SD1862.
ï¬Dimensions (Unit : mm)
2SB1188
4.5+â00..21
1.6±0.1
1.5â+00..12
2SB1182
6.5±0.2
5.1+â00..21
C0.5
2.3+â00..21
0.5±0.1
ï¬Structure
Epitaxial planar type
PNP silicon transistor
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4â+00..015
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
â Abbreviated symbol: BC
2SB1240
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
â Denotes hFE
(1) Emitter
(2) Collector
(3) Base
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
â40
Collector-emitter voltage
VCEO
â32
Emitter-base voltage
VEBO
â5
Collector current
â2
IC
â3
2SB1188
Collector power
dissipation
2SB1182
2SB1240
0.5
2
PC
10
1
Junction temperature
Tj
150
Storage temperature
Tstg
â55 to 150
â1 Single pulse, Pw=100ms
â2 When mounted on a 40Ã40Ã0.7 mm ceramic board.
â3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Unit
V
V
V
A(DC)
A (Pulse)â1
W
W â2
W (Tc=25°C)
W â3
°C
°C
www.rohm.com
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
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