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2SB1184_10 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-60V, -3A) | |||
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Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
ï¬Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
ï¬Dimensions (Unit : mm)
2SB1184
6.5±0.2
5.1
+0.2
â0.1
C0.5
2.3
+0.2
â0.1
0.5±0.1
2SB1243
6.8±0.2
2.5±0.2
ï¬Structure
Epitaxial planar type
PNP silicon transistor
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
â60
V
Collector-emitter voltage
VCEO
â50
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
Collector power 2SB1184
dissipation
PC
2SB1243
â3
A (DC)
1
W
15
W (TC=25°C)
1
W
â1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
â55 to 150
°C
â1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO â60
â
â
V IC= â50μA
Collector-emitter breakdown voltage BVCEO â50
â
â
V IC= â1mA
Emitter-base breakdown voltage
BVEBO
â5
â
â
V IE= â50μA
Collector cutoff current
ICBO
â
â
â1
μA VCB= â40V
Emitter cutoff current
IEBO
â
â
â1
μA VEB= â4V
Collector-emitter saturation voltage VCE(sat) â
â
â1
V IC/IB= â2A/ â0.2A
â
DC current transfer ratio
hFE
120
â
390
â VCE= â3V, IC= â0.5A
â
Transition frequency
fT
â
70
â
MHz VCE= â5V, IE=0.5A, f=30MHz
Output capacitance
â Measured using pulse current.
Cob
â
50
â
pF VCB= â10V, IE=0A, f=1MHz
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.C
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