2SB1184TLR Datasheet, PDF (1/4 Pages) Rohm – Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.

Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
Dimensions (Unit : mm)
2SB1184
6.5±0.2
5.1
+0.2
−0.1
C0.5
2.3
+0.2
−0.1
0.5±0.1
2SB1243
6.8±0.2
2.5±0.2
Structure
Epitaxial planar type
PNP silicon transistor
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
Collector power 2SB1184
dissipation
PC
2SB1243
−3
A (DC)
1
W
15
W (TC=25°C)
1
W
∗1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
∗1 Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −60
−
−
V IC= −50μA
Collector-emitter breakdown voltage BVCEO −50
−
−
V IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V IE= −50μA
Collector cutoff current
ICBO
−
−
−1
μA VCB= −40V
Emitter cutoff current
IEBO
−
−
−1
μA VEB= −4V
Collector-emitter saturation voltage VCE(sat) −
−
−1
V IC/IB= −2A/ −0.2A
∗
DC current transfer ratio
hFE
120
−
390
− VCE= −3V, IC= −0.5A
∗
Transition frequency
fT
−
70
−
MHz VCE= −5V, IE=0.5A, f=30MHz
Output capacitance
∗ Measured using pulse current.
Cob
−
50
−
pF VCB= −10V, IE=0A, f=1MHz
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2010.02 - Rev.C