2SB1184 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-60V, -3A)

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Transistors
2SB1184 / 2SB1243
Power Transistor (−60V, −3A)
2SB1184 / 2SB1243
!Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
!Structure
Epitaxial planar type
PNP silicon transistor
!External dimensions (Units : mm)
2SB1184
6.5±0.2
5.1
+0.2
−0.1
C0.5
2.3
+0.2
−0.1
0.5±0.1
2SB1243
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
IC
Collector current
ICP
Collector power 2SB1184
dissipation
PC
2SB1243
−3
−4.5
1
15
1
A (DC)
A (Pulse) ∗1
W
W (TC=25°C)
W
∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Single pulse, Pw=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.
1/3
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