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2SB1183 Datasheet, PDF (1/1 Pages) Rohm – Darlington connection for high DC current gain. | |||
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Transistors
2SB1183 / 2SB1239
Power transistor (â40V, â2A)
2SB1183 / 2SB1239
!Features
1) Darlington connection for high DC current gain.
2) Built-in 4k⦠resistor between base and emitter.
3) Complements the 2SD1759 / 2SD1861.
!Equivalent circuit
C
B
RBE 4kâ¦
C : Collector
B : Base
E
E : Emitter
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
â40
Collector-emitter voltage
VCER
â40
Emitter-base voltage
VEBO
â5
Collector current
â2
IC
â3
1
Collector power
dissipation
2SB1183
PC
10
2SB1239
1
Junction temperature
Tj
150
Storage temperature
Tstg
â55~+150
â1 Single pulse Pw=10ms
â2 Printed circuit board 1.7 mm thick, collector plating 100mm2 or larger.
Unit
V
V
V
A(DC)
A(Pulse) â1
W
W(Tc=25°C)
W
â2
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1183
CPT3
1k~200k
TL
2500
2SB1239
ATV
1k~
T146
2500
!External dimensions (Units : mm)
2SB1183
5.5 1.5
0.9
C0.5
0.8Min.
1.5
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1239
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1183
2SB1239
Output capacitance
Symbol
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
hFE
Cob
Min.
â40
â40
â5
â
â
â
1000
1000
â
Typ. Max.
â
â
â
â
â
â
â
â1
â
â1
â
â1.5
â
20000
â
â
11
â
Unit
Conditions
V
IC=â50µA
V
IC=â1mA, RBE=10kâ¦
V
IE=â50µA
µA VCB=â24V
µA VEB=â4V
V
IC/IB=â0.6A/â1.2mA
â
VCE/IC=â2V/â0.5A
â
pF VCB=â10V, IE=0A, f=1MHz
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