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2SB1182 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Medium Power Transistor | |||
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Medium power transistor (ï32V, ï2A)
2SB1182 / 2SB1240
ï¬Features
1) Low VCE(sat).
VCE(sat) = ï0.5V (Typ.)
(IC/IB = ï2A / ï0.2A)
2) Complements 2SD1758 / 2SD1862.
ï¬Structure
Epitaxial planar type
PNP silicon transistor
ï¬Dimensions (Unit : mm)
2SB1182
6.5±0.2
5.1+â00..21
C0.5
2.3+â00..21
0.5±0.1
2SB1240
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
â40
VCEO
â32
VEBO
â5
Collector current
â2
IC
â3
Collector power 2SB1182
dissipation
2SB1240
10
PC
1
Junction temperature
Tj
150
Storage temperature
Tstg
â55 to 150
â1 Single pulse, Pw=100ms
â2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Unit
V
V
V
A(DC)
A (Pulse) â1
W (Tc=25°C)
W â2
°C
°C
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO â40
Collector-emitter breakdown voltage BVCEO â32
Emitter-base breakdown voltage
BVEBO
â5
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
Collector-emitter saturation voltage VCE(sat) â
DC current transfer ratio
hFE
120
Transition frequency
fT
â
Output capacitance
â Measured using pulse current.
Cob
â
Typ.
â
â
â
â
â
â0.5
â
100
50
Max.
â
â
â
â1
â1
â0.8
390
â
â
Unit
V
V
V
μA
μA
V
â
MHz
pF
Conditions
IC= â50μA
IC= â1mA
IE= â50μA
VCB= â20V
VEB= â4V
IC/IB= â2A/ â0.2A
â
VCE= â3V, IC= â0.5A
â
VCE= â5V, IE=0.5A, f=100MHz
VCB= â10V, IE=0A, f=1MHz
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.C
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