2SB1181TLQ Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (−80V, −1A)

Power Transistor (−80V, −1A)
2SB1260 / 2SB1181
Features
1) Hight breakdown voltage and high current.
BVCEO= −80V, IC = −1A
2) Good hFE linearty.
3) Low VCE(sat).
4) Complements the 2SD1898 / 2SD1733.
Structure
Epitaxial planar type
PNP silicon transistor
Dimensions (Unit : mm)
2SB1260
4.5^+0.2
1.6±0.1
1.5±
2SB1181
6.5±0.2
5.1^+0.2
C0.5
2.3^+0.2
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
ROHM : MPT3
EIAJ : SC-62
0.4^+0.1
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
IC
Collector current
ICP
2SB1260
Collector power
dissipation
2SB1181
PC
2SB1181
Junction temperature
Tj
Storage temperature
Tstg
∗^{1 2SB1260 : Pw=20ms duty=1/2}
∗^{2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board.}
Limits
−80
−80
−5
−1
−2 ^∗1
0.5
2 ^∗2
1
10
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25°C)
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO −80
−
−
V IC= −50μA
Collector-emitter breakdown voltage BVCEO −80 −
−
V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5
−
−
V IE= −50μA
Collector cutoff current
ICBO
−
−
−1 μA VCB= −60V
Emitter cutoff current
IEBO
−
−
−1
μA VEB= −4V
Collector-emitter saturation voltage
VCE(sat)
−
− −0.4 V IC/IB= −500mA/ −50mA
DC current transfer ratio
hFE
120
−
390
− VCE= −3V, IC= −0.1A
Transition frequency 2SB1181
2SB1260
Output capacitance
2SB1181
fT
− 100 − MHz VCE= −10V, IE=50mA, f=100MHz
−
20
−
pF ^{VCB= −10V}
Cob
IE=0A
−
25
−
pF _f=1MHz
www.rohm.com
1/2
˓^c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.G