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2SAR544R_10 Datasheet, PDF (1/5 Pages) Rohm – Midium Power Transistors (-80V / -2.5A)
Midium Power Transistors (-80V / -2.5A)
2SAR544R
 Structure
PNP Silicon epitaxial planar transistor
 Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)
2) High speed switching
 Applications
Driver
 Packaging specifications
Package
Type Code
Taping
TL
Basic ordering unit (pieces) 3000
2SAR544R

 Dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
Abbreviated symbol : MS
 Inner circuit (Unit : mm)
2
(1) Base
(2) Emitter
(3) Collector
3
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
-80
V
VCEO
-80
V
VEBO
-6
V
IC
-2.5
A
ICP *1
-5
A
PD *2
0.5
W
PD *3
1
W
Tj
150
C
Tstg -55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
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2010.02 - Rev.A