2SAR533D Datasheet, PDF (1/6 Pages) Rohm – Midium Power Transistors (-50V / -3A)

Midium Power Transistors (50V / 3A)
2SAR533D
 Features
1) Low saturation voltage, typically
V_{CE (sat)} = -0.4V (Max.) (I_C / I_B= -1A / -50mA)
2) High speed switching
 Dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
(2)
0.5
 Structure
PNP Silicon epitaxial planar transistor
 Applications
Driver
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
CPT3
TL
2500
0.75
(1)
(3)
(1) Base
0.65
0.9 2.3
(2) Collector
(1)
(2)
(3) 2.3
0.5
1.0
(3) Emitter
 Inner circuit
(3)
(1)
(1) Base
(2) Collector
(3) Emitter
(2)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
-50
V
V_CEO
-50
V
V_EBO
-6
V
I_C
-3
A
I_CP *1
-6
A
P_D ^*2
1
W
P_D ^*3
10
W
T_j
150
C
T_stg -55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate.
*3 Tc=25℃
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2010.07 - Rev.A