2SAR523M Datasheet, PDF (1/3 Pages) Rohm – General purpose transistor(-50V,-0.1A)

General purpose transistor(-50V,-0.1A)
2SAR523M/2SAR523EB/2SAR523UB
Structure
PNP silicon epitaxial planar transistor
Dimensions (Unit : mm)
VMT3
Features
Complemets the 2SCR523M/2SCR523EB/2SCR523UB.
Applications
Switch, LED driver
EMT3F
Abbreviated symbol : PB
Packaging specifications
Package
Type
Packaging Type
Code
Basic ordering
unit (pieces)
2SAR523M
2SAR523EB
2SAR523UB
VMT3
Taping
T2L
8000
EMT3F
Taping
TL
3000
UMT3F
Taping
TL
3000
UMT3F
(3)
(1)
(2)
Abbreviated symbol : PB
2.0
0.32
0.9
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : PB
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
ICP ^∗1 −200
mA
Power
2SAR523M,2SAR523EB _{PD ∗2}
150
mW
dissipation _2SAR523UB
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
inner circuit
(3)
(1)
(1) Base
(2) Emitter
(2)
(3) Collector
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−50 −
−
V IC= −1mA
−50 −
−
V IC= −50μA
−5
−
−
V IE= −50μA
−
− −0.1 μA VCB= −50V
−
− −0.1 μA VEB= −5V
− −0.15 −0.40 V IC= −50mA, IB= −5mA
120
−
560
− VCE= −6V, IC= −1mA
− 300 − MHz VCE= −10V, IE=10mA, f=100MHz
−
2
−
pF VCB= −10V, IE=0A, f=1MHz
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2010.09 - Rev.A