2SAR522M Datasheet, PDF (1/3 Pages) Rohm – General purpose transistor(-20V,-0.2A)

General purpose transistor(-20V,-0.2A)
2SAR522M / 2SAR522EB / 2SAR522UB
Structure
PNP silicon epitaxial planar transistor
Features
Complements the 2SCR522M / 2SCR522EB / 2SCR522UB.
Dimensions (Unit : mm)
VMT3
Applications
Switch, LED driver
EMT3F
Abbreviated symbol : PC
Packaging specifications
Package
Type
Packaging Type
Code
Basic ordering
unit (pieces)
2SAR522M
2SAR522EB
2SAR522UB
VMT3
Taping
T2L
8000
EMT3F
Taping
TL
3000
UMT3F
Taping
TL
3000
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage VCEO
−20
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−200
mA
ICP ^∗1 −400
mA
Power
2SAR522M,2SAR522EB
dissipation _2SAR522UB
PD ^∗2
150
200
mW
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
UMT3F
(3)
(1)
(2)
Abbreviated symbol : PC
2.0
0.32
0.9
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : PC
Inner circuit
(3)
(1)
(1) Base
(2) Emitter
(2)
(3) Collector
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−20 −
−
V IC= −1mA
−20 −
−
V IC= −50μA
−5
−
−
V IE= −50μA
−
− −0.1 μA VCB= −20V
−
− −0.1 μA VEB= −5V
− −0.12 −0.30 V IC= −100mA, IB= −10mA
120
−
560
− VCE= −2V, IC= −1mA
− 350 − MHz VCE= −10V, IE=10mA, f=100MHz
−
3
−
pF VCB= −10V, IE=0A, f=1MHz
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2010.09 - Rev.A