2SAR514R Datasheet, PDF (1/6 Pages) Rohm – Midium Power Transistors (-80V / -0.7A)

Midium Power Transistors (-80V / -0.7A)
2SAR514R
 Features
1) Low saturation voltage, typically
V_{CE (sat)} = -0.4V (Max.) (I_C / I_B= -300mA / -15mA)
2) High speed switching
 Structure
PNP Silicon epitaxial planar transistor
 Applications
Driver
 Dimensions (Unit : mm)
TSMT3
(3)
(1)
(1) Base
(2) Emitter
(3) Collector
(2)
Abbreviated symbol : MD
 Packaging specifications
Package
Type _Code
TSMT3
TL
Basic ordering unit (pieces) 3000
 Inner circuit
(23)
(1)
 Absolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol Limits
Unit
(1) Base
V_CBO
-80
V
(2) Emitter
(3) Collector
(₍2₃)₎
V_CEO
-80
V
Emitter-base voltage
V_EBO
-6
V
Collector current ^DC
Pulsed
I_C
-0.7
A
I_CP *1
-1.4
A
Power dissipation
P_D ^*2
0.5
W
P_D ^*3
1.0
W
Junction temperature
T_j
150
C
Range of storage temperature
T_stg -55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm³] ceramic substrate.
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.A