2SAR512P_09 Datasheet, PDF (1/5 Pages) Rohm – Medium Power Transistors (−30V / −2A)

Medium Power Transistors (−30V / −2A)
2SAR512P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V_{CE (sat)} = -0.4V (Max.) (I_C / I_B= -700mA / -35mA)
2) High speed switching
Applications
Driver
Packaging specifications
Package
Type _Code
Taping
T100
Basic ordering unit (pieces) 1000
2SAR512P
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
-30
V
V_CEO
-30
V
V_EBO
-6
V
I_C
-2
A
I_CP ^*1
-4
A
P_D ^*2
0.5
W
P_D ^*3
2
W
T_j
150
°C
T_stg -55 to 150
°C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Dimensions (Unit : mm)
MPT3
(1) (2) (3)
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : MB
Inner circuit (Unit : mm)
(3)
(1)
(1) Base
(2) Collector
(3) Emitter
(2)
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2009.10 - Rev.A