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2SA821S Datasheet, PDF (1/3 Pages) Rohm – HIGH VOLTAGE AMPLIFIER TRANSISTOR | |||
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Transistors
2SA821S
High-voltage Amplifier Transistor (â210V, â30mA)
2SA821S
zFeatures
1) High breakdown voltage, (VCER = â210V )
2) Complements the 2SC1651S.
zExternal dimensions (Unit : mm)
SPT
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCES
VEBO
IC
â210
â210
â5
â30
Collector power dissipation
Junction temperature
Storage temperature
PC
250
Tj
150
Tstg â55 to +150
â RBE=10kâ¦
Unit
V
V
â
V
A
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
â210
â210
â5
â
â
â
82
â
â
Typ.
â
â
â
â
â
â
â
50
8
Max.
â
â
â
â
â1
â1
â1
270
â
Unit
V
V
V
µA
µA
V
â
MHz
pF
Conditions
IC= â50µA
IC= â100µA, RBE=10kâ¦
IE= â50µA
VCB= â150V
VEB= â4.5V
IC/IB= â2mA/â0.2mA
VCE= â3V, IC= â5A
VCE= â5V , IE=2mA , f=30MHz
VCE= â10V , IE=0A , f=1MHz
zPackaging specifications and hFE
Type
2SA821S
Package
SPT
hFE
PQ
Code
TP
Basic ordering unit (pieces)
5000
Rev.A
1/2
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