2SA2092 Datasheet, PDF (1/4 Pages) Rohm – -1A / -60V Bipolar transistor

Transistors
-1A / -60V Bipolar transistor
2SA2092
2SA2092
zApplications
High-speed switching, low frequency amplification
zFeature
1) High speed switching. (tf : Typ. : 30ns at IC = -1A)
2) Low saturation voltage.
(Typ. : ^−200mV at IC = ^−500mA, IB = ^−50mA)
3) Strong discharge resistance for inductive load and
capacitance load.
4) Low switching noise.
zStructure
PNP epitaxial planar silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
PULSE
Power dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP ∗1
PC ∗2
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
Limits
−60
−60
−6
−1
−2
500
150
−55 to +150
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) Base
(2) Emitter
(3) Collector
0~0.1
(1) (2)
0.95 0.95
1.9
0.16
Each lead has same dimensions
Abbreviated symbol : VN
zPackaging specifications
Unit
Package
TSMT3
V
Packaging type
Taping
V
Code
TL
V
Part No.
Basic ordering unit (pieces) 3000
A
2SA2092
A
mW
zhFE rank
Q
°C
°C
120-270
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol Min.
BVCEO −60
BVCBO −60
BVEBO −6
ICBO
−
IEBO
−
VCE(sat)
−
hFE ^{∗3 120}
fT ^∗1 −
Cob
−
ton
−
tstg
−
tf ∗2 −
∗1 Pulse measurement
∗2 See switching test circuit
∗3 hFE rank
Typ.
−
−
−
−
−
−200
−
300
15
30
100
30
Max.
−
−
−
−1.0
−1.0
−500
270
−
−
−
−
−
Unit
Conditions
V IC= −1mA
V IC= −100µA
V IE= −100µA
µA VCB= −40V
µA VEB= −4V
mV IC= −500mA, IB= −50mA
− _{VCE= −2V, IC= −100mA}
MHz _{VCE= −10V, IE=100mA, f=10MHz}
pF VCB= −10V, IE=0, f=1MHz
ns IC= −1A,
ns ^{IB1= −100mA}
IB2=100mA
ns _VCC ∼− _−25V
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