2SA2071 Datasheet, PDF (1/4 Pages) Rohm – Power transistor (-60V, -3A)

Transistor
Power transistor (−60V, −3A)
2SA2071
2SA2071
!Features
1) High speed switching. (Tf : Typ. : 20ns at IC = −3A)
2) Low saturation voltage, typically
(Typ. : −200mV at IC = −2A, IB = −0.2A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5824
!Applications
Low Frequency Amplifier
High speed switching
!External dimensions (Units : mm)
MPT3
4.0
1.0
2.5
0.5
(1)
(2)
(3)
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
Each lead has same dimensions
Abbreviated symbol : UN
!Structure
PNP Silicon epitaxial planar transistor
!Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SA2071
Taping
T100
1000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Pw=100ms
∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate
Limits
−60
−60
−6
−3
−6
500
2.0
150
−55~+150
Unit
V
V
V
A
A ^∗1
mW
W ^∗2
°C
°C
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