2SA2018_1 Datasheet, PDF (1/3 Pages) Rohm – Low frequency transistor

Transistors
2SA2018 / 2SA2030 / 2SA2119K
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching, for muting.
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ≤ 250mA
At IC = −200mA / IB = −10mA
zDimensions (Unit : mm)
2SA2018
Each lead has same dimensions
ROHM : EMT3
Abbreviated symbol : BW
EIAJ : SC-75A
JEDEC : SOT-416
(1) Emitter
(2) Base
(3) Collector
2SA2030
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗Single pulse, Pw=1ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
VMT3
PC EMT3
SMT3
Tj
Tstg
Limits
−15
−12
−6
−500
−1
150
200
150
−55 to +150
Unit
V
V
V
mA
A^∗
mW
°C
°C
ROHM : VMT3
2SA2119K
Each lead has same dimensions
Abbreviated symbol : BW
(1) Base
(2) Emitter
(3) Collector
2.9
1.1
0.4
0.8
(3)
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
ROHM : SMT3
Abbreviated symbol : BW
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −15 − − V IC= −10µA
Collector-emitter breakdown voltage BVCEO −12 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −6 −
−
V IE= −10µA
Collector cutoff current
ICBO
−
− −100 nA VCB= −15V
Emitter cutoff current
IEBO
−
− −100 nA VEB= −6V
DC current transfer ratio
hFE 270 − 680 − VCE= −2V / IC= −10mA
Collector-emitter saturation voltage VCE (sat) − −100 −250 mV IC= −200mA / IB= −10mA
Transition frequency
fT
− 260 − MHz VCE= −2V, IE=10mA, fT=100MHz
Output capacitance
Cob − 6.5 − pF VCB= −10V, IE=0A, f=1MHz
Rev.C 1/2