2SA2018 Datasheet, PDF (1/3 Pages) Rohm – Low frequency transistor

Transistors
2SA2018 / 2SA2030 / 2SA2119K
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching, for muting.
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ≤ 250mA
At IC = 200mA / IB = 10mA
zExternal dimensions (Unit : mm)
2SA2018
(1)
(3)
(2)
0.8
1.6
0.1Min.
Each lead has same dimensions
ROHM : EMT3
Abbreviated symbol : BW
EIAJ : SC-75A
JEDEC : SOT-416
(1) Emitter
(2) Base
(3) Collector
2SA2030
1.2
0.2 0.8 0.2
(2)
(3)
(1)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗Single pulse, Pw=1ms
Symbol
VCBO
VCEO
IC
ICP
VMT3
PC EMT3
SMT3
Tj
Tstg
Limits
15
12
500
1
150
300
150
−55 to +150
Unit
V
V
mA
A^∗
mW
°C
°C
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol : BW
(1) Base
(2) Emitter
(3) Collector
2SA2119K
1.6
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
Abbreviated symbol : BW
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
DC current transfer ratio
hFE
Collector-emitter saturation voltage VCE (sat)
Transition frequency
fT
Output capacitance
Cob
Min.
15
12
6
−
270
−
−
−
Typ.
−
−
−
−
−
100
260
6.5
Max.
−
−
−
100
680
250
−
−
Unit
Conditions
V IC=10µA
V IC=1mA
V IE=10µA
nA VCB=15V
− VCE=2V / IC=10mA
mV IC=200mA / IB=10mA
MHz VCE=2V, IE=10mA, fT=100MHz
pF VCB=10V, IE=0A, f=1MHz
Rev.A 1/2