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2SA2007 Datasheet, PDF (1/1 Pages) Rohm – High-speed Switching Transistor (−60V,−12A) | |||
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Transistors
2SA2007
High-speed Switching Transistor (â60V,â12A)
2SA2007
!Features
1) High switching speed.
(Typ. tf = 0.15µs at Ic = â6A)
2) Low saturation voltage.
(Typ. VCE(sat) = â0.2V at IC / IB = â6A / â0.3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5526.
!External dimensions (Units : mm)
10.0
Ï 3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collectorpowerdissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
â100
â60
â5
â12
â20
2
25
150
â55 â¼ +150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA2007
TO-220FN
F
â
500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
â100
â60
â5
â
â
â
â
â
â
160
â
â
â
â
â
Typ.
â
â
â
â
â
â
â
â
â
â
80
250
â
â
â
Max.
â
â
â
â10
â10
â0.3
â0.5
â1.2
â1.5
320
â
â
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
â
MHz
pF
µs
µs
µs
Conditions
IC = â50µA
IC = â1mA
IE = â50µA
VCB = â100V
VEB = â5V
IC/IB = â6A/â0.3A
IC/IB = â8A/â0.4A
IC/IB = â6A/â0.3A
IC/IB = â8A/â0.4A
VCE = â2V , IC = â2A
VCE = â10V , IE = 1A , f = 30MHz
VCB = â10V , IE = 0A , f = 1MHz
IC = â6A , RL = 5â¦
IB1 = âIB2 = â0.3A
VCC â30V
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