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2SA1952 Datasheet, PDF (1/2 Pages) Rohm – High-speed Switching Transistor (-60V, -5A) | |||
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Transistors
2SA1952
High-speed Switching Transistor (â60V, â5A)
2SA1952
zFeatures
1) High speed switching. (tf : Typ. 0.15 µs at IC = â3A)
2) Low VCE(sat). (Typ. â0.2V at IC/IB = â3/â0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
â100
â60
â5
â5
â10
1
10
150
â55~+150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
°C
°C
zExternal dimensions (Units : mm)
2SA1952
5.5
1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA1952
CPT3
Q
TL
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
â100
â60
â5
â
â
â
â
â
â
120
â
â
â
â
â
Typ.
â
â
â
â
â
â
â
â
â
â
80
130
â
â
â
Max.
â
â
â
â10
â10
â0.3
â0.5
â1.2
â1.5
270
â
â
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
â
MHz
pF
µs
µs
µs
Conditions
IC = â50µA
IC = â1mA
IE = â50µA
VCB = â100V
VEB = â5V
IC/IB=â3A/â0.15A
IC/IB=â4A/â0.2A
IC/IB=â3A/â0.15A
IC/IB=â4A/â0.2A
VCE = â2V , IC = â1A
VCE = â10V , IE = 0.5A , f = 30MHz
VCB = â10V , IE = 0A , f = 1MHz
IC = â3A , RL = 10â¦
IB1 = âIB2 = â0.15A
VCC â30V
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