2SA1900 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (-50V, -1A)

Transistors
2SA1900
Medium power transistor (−50V, −1A)
2SA1900
zFeatures
1) Low saturation voltage, typically V_CE(sat) = −0.15V at I_C /
I_B = −500mA / −50mA
2) P_C=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SC5053
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−60
Collector-emitter voltage
VCEO
−50
Emitter- base voltage
VEBO
−5
Collector current
−1
IC
−2
0.5
Collector power dissipation
PC
2
Collector power dissipation
Storage temperature
Tj
150
Tstg
−55 to +150
∗1 Single pulse Pw=20ms, Duty=1/2
∗2 When mounted on a 40⁺ 40⁺ 0.7mm seramic board.
Unit
V
V
V
A
A (Pulse) ∗1
W
W
∗2
°C
°C
zExternal dimensions (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
Emitter cutoff current
Collector-emitter saturation voltage
IEBO
VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min. Typ. Max. Unit
Conditions
−60
−
−
V IC=−50µA
−50
−
−
V IC=−1mA
−5
−
−
V IE=−50µA
−
−
−0.1
µA VCB=−40V
−
−
−0.1
µA VEB=−4V
−
−
−0.4
V IC/IB=−500mA/−50mA
120
−
270
− VCE/IC=−3V/−0.5A
−
150
−
MHz VCE=−5V , IE=50mA , f=100MHz
−
20
−
pF VCB=−10V , IE=0A , f=1MHz
zPackaging specifications and hFE
Type
2SA1900
Package
MPT3
h_FE
Marking
Q
AL ∗
Code
T100
Basic ordering unit (pleces)
1000
∗ Denotes hFE
Rev.A
1/2