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2SA1862_1 Datasheet, PDF (1/3 Pages) Rohm – High-voltage Switching Transistor (−400V, −2A) | |||
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Transistors
High-voltage Switching Transistor
(â400V, â2A)
2SA1862
2SA1862
zFeatures
1) High breakdown voltage. (BVCEO = â400V)
2) Low saturation voltage.
(Max. VCE (sat) = â0.5V at IC / IB = â500mA / â100mA)
3) High switching speed, typically tf = 0.4µs at IC = â1A.
4) Wide SOA (safe operating area).
zExternal dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
â Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
â400
â400
â7
â2
â4
1
10
150
â55 to +150
Unit
V
V
V
A (DC)
A (Pulse) â
W
W (Tc=25°C)
°C
°C
0.75
(1)Base (Gate)
(2)Collector (Drain)
(3)Emitter (Source)
0.65
0.9 2.3
(1)
(2)
(3) 2.3
0.5
1.0
Abbreviated symbol : A1862
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA1862
CPT3
P
TL
2500
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
â400
â400
â7
â
â
â
â
82
â
â
â
â
â
Typ.
â
â
â
â
â
â
â
â
18
30
0.2
1.8
0.4
Max.
â
â
â
â10
â10
â0.5
â1.2
180
â
â
â
â
â
Unit
V
V
V
µA
µA
V
V
â
MHz
pF
µs
µs
µs
Conditions
IC= â50µA
IC= â1mA
IE= â50µA
VCB= â400V
VEB= â5V
IC/IB= â0.5A/ â0.1A
IC/IB= â0.5A/ â0.1A
VCE= â5V, IC= â0.1A
VCB= â10V, IE=0.1A, f=5MHz
VCE= â10V, IE=0A, f=1MHz
IC=â1A, RL=150â¦
IB1=âIB2= â0.2A
VCC â150V
Rev.B
1/2
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